mje700 thru mje703 pnp mje800 thru mje803 npn complementary power darlington transistors description: the central semiconductor mje700, mje800 series devices are medium power complementary silicon darlington transistors designed for audio amplifier applications as complementary output devices. marking: full part number mje700 mje702 mje701 mje703 mje800 MJE802 maximum ratings: (t c =25c) symbol mje801 mje803 units collector-base voltage v cbo 60 80 v collector-emitter voltage v ceo 60 80 v emitter-base voltage v ebo 5.0 v continuous collector current i c 4.0 a continuous base current i b 100 ma power dissipation p d 40 w operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance jc 3.13 c/w electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min max units i cbo v cb =rated v cbo 100 a i cbo v cb =rated v cbo , t c =100c 500 a i ceo v ce =rated v ceo 100 a i ebo v eb =5.0v 2.0 ma bv ceo i c =50ma (mje702,703,802,803) 80 v bv ceo i c =50ma (mje700,701,800,801) 60 v v ce(sat) i c =1.5a, i b =30ma (mje700,702,800,802) 2.5 v v ce(sat) i c =2.0a, i b =40ma (mje701,703,801,803) 2.8 v v ce(sat) i c =4.0a, i b =40ma 3.0 v v be(on) v ce =3.0v, i c =1.5a (mje700,702,800,802) 2.5 v v be(on) v ce =3.0v, i c =2.0a (mje701,703,801,803) 2.5 v v be(on) v ce =3.0v, i c =4.0a 3.0 v h fe v ce =3.0v, i c =1.5a (mje700,702,800,802) 750 h fe v ce =3.0v, i c =2.0a (mje701,703,801,803) 750 h fe v ce =3.0v, i c =4.0a 100 f t v ce =3.0v, i c =1.5a, f=1.0mhz 1.0 mhz to-126 case r2 (23-january 2014) www.centralsemi.com
mje700 thru mje703 pnp mje800 thru mje803 npn complementary power darlington transistors lead code: 1) emitter 2) collector 3) base marking: full part number to-126 case - mechanical outline www.centralsemi.com r2 (23-january 2014)
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